NEOARM 30-200kV cFEG

EQUIPMENTS, Unique Equipment, TEM, UMEAP - Barcelona

NEOARM 30-200kV cFEG

The JEM-ARM200F: NEOARM microscope is a transmission electron microscope with equipped with a cold cathode field emission (cold FEG) electron gun and an aberration corrector in the condenser system. It allows working at acceleration voltages of 30 kV, 80 kV and 200 kV.

This instrument is specially optimized for in situ microscopy, applied to both materials science and life sciences. The installation of a high-speed electrostatic shutter in the gun allows obtaining a pulsed electron beam for very precise control of the electron dose. Combined with the possibility of working at low voltage and with the Rio (CMOS) and Gatan K3 cameras (post-GIF, direct detection) with high sensitivity and acquisition speed, it allows observing the response in real time under external stimuli, even with beam sensitive specimens. It has sample holders for observation in liquid with inlet and outlet flow control, sample holders for heating and/or electrical polarization of the sample, sample holders for cryogenic observation at liquid nitrogen temperature and high rotation angle sample holders for tomography, in addition of conventional single and double tilt holders.

At an analytical level, it has two EDXS detectors arranged orthogonally to allow the acquisition of analytical tomographic series, a GIF Continuum energy filter for electron energy loss spectroscopy (EELS) with Gatan K3 post-filter camera and capacity for momentum resolved EELS (Q-slit). With probe-corrected beam resolution, STEM mode images (BF, ABF, ADF and HAADF) as well as EDXS and EELS spectroscopic information can be obtained with atomic column resolution.

It is equipped to carry out 4D-STEM diffraction measurements with the Gatan STEMx system and with the Nanomegas ASTAR and TopSpin system for the acquisition of 4D-STEM data with electron beam precession. The nanodiffraction (NBD) mode is also corrected for aberrations.

Image:

  • STEM mode (corrected): 0.078 nm resolution at 200 kV (0.11 nm at 80 kV). Detectors: BF, ABF, ADF, HAADF.
  • TEM mode (not corrected): HRTEM image resolution of 0.1 nm. Information limit < 0.11 nm
  • Morphological electron tomography.

Chemical analysis:

  • Energy Dispersive X Ray Spectroscopy (EDXS) and Electron Energy Loss Spectroscopy (EELS, EFTEM)
  • Compositional maps with atomic columna resolution in scanning-transmission mode (STEM).
  • Analytical electron tomography.

Characterization of other properties:

  • Strain mapping, orientation and chrystallographic pase mapping, ptycography, electric and magnetic field mapping thorou diferential phase contrast (DPC).

In situ measurements:

  • Liquid pase microscopy with possibility of biasing and heating.
  • Biasing and/or heating of solid state specimen
  • Cryogenic observation at liquid nitrogen temperature.

Accelerating voltages: 30 kV – 80 kV – 200 kV

Energy resolution (cFEG): 0.26 eV FWHM ZLP

Electrostatic doce modulator: 100 ns pulses with commutation speed of 50 ns.

Aberration corrector: ASCOR, with JEOL Cosmo automated correction software. Aberration correction up to 5th order. Corrector aligned for all the accelerating voltages.

Pre energy filter camera: Gatan Rio, CMOS, 4096 x 4096 pixels, 20 fps (maximum quality), 160 fps at 1k x 1k.

Energy filter: GIF Continuum K3, with Dual EELS and Q-slit for momentum-resolved acquisition

Filter camera: Gatan K3, direct detection, 4k x 4k.

Detectors:

  • 2 EDXS SDD detectors, windowless, 100 mm^2 detection area (each) and combined solid angle of 1.8 sr.
  • STEM detectors: BF, ABF, ADF, HAADF, secondary electrons and backscattered electrons

Coming soon